A Study on Multi-Gate Poly-Si Junctionless and Junctionless Accumulation Mode FinFETs for Monolithic 3-D IC Applications

博士 === 國立交通大學 === 電子物理系所 === 107 === In this dissertation, we have successfully fabricated and demonstrated the n-type multi-gate poly-Si junctionless FinFETs (MG JL FinFETs) and the p-type multi-gate poly-Si junctionless accumulation mode FinFETs (MG JAM FinFETs) without the use of advanced lithogr...

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Bibliographic Details
Main Authors: Hsieh, Dong-Ru, 謝東儒
Other Authors: Chao, Tien-Sheng
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/935yfu

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