Strain and Optical Characteristics Analysis of Mg Ion-Implanted GaMnAs Diluted Magnetic Semiconductor Fabricated by Ion Beam Induced Epitaxial Crystallization

碩士 === 國立交通大學 === 電子研究所 === 107 === The GaMnAs diluted magnetic semiconductor (DMS) has attracted much attention in the past two decades because of its physical models and potential applications in spintronics. In order to increase the Curie temperature of GaMnAs, it is necessary to increase the Mn...

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Bibliographic Details
Main Authors: Chen, Nai-Hui, 陳迺惠
Other Authors: Lee, Chien-Ping
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/tdq9pk