Simulation and Device Fabrication of Poly-Si TFTs with T-shaped Gate and Air Spacers
碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, we use the Sentaurus TCAD simulation to explore the impact of the structural parameters on the electrical characteristics of T-gate devices. The effects and trade-off between using source/drain (S/D) overlapping and underlapping structures are disc...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hbk498 |