Epitaxial Aluminum Thin Film on Silicon Substrate and its Heteroepitaxy Application

• Main Authors: Tsai, Yi-Hsun, 蔡易勳
• Other Authors: Lin, Sheng-Di
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/j5upty

碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, epitaxial aluminum film were grown on Si(100) and Si(111) by molecular beam epitaxy. Moreover, 3 nm aluminum film were used as buffer layer to grow antimonide on silicon substrate. Aluminum film grown on Si(100) at low temperature were poly crystalline with poor quality even with different kind of chemical cleaning solution which cause different consequence. If we increase the growth temperature to Tc 275℃, Al(111) orientation would be suppressed, but the crystal quality are still poor. However Al(111) were grown on Si(111) with twin structure. With different kind of surface reconstruction, such as Si(111)-1×1、Si(111)-√3×√3-Al、Si(111)-7×7, we can get Al(111) with different characteristic. Growth on Si(111)-1×1 resulted in a flat surface and on Si(111)-7×7 resulted in better quality and lower twin ratio. Therefore, Al(200) showed up when higher growth temperature was used. The RMS of roughness remain good as thickness of aluminum film reduce to 3 nm. We also found that the difference of reflection between simulated and measured value getting bigger with decreasing of aluminum film thickness. In the heteroepitaxy part, Al would become AlSb during the growth process, which we call antimonidation. AlSb got bad atomic arrangement which lead to worse epitaxial structure and optical characteristic than the one without Al thin film.