Epitaxial Aluminum Thin Film on Silicon Substrate and its Heteroepitaxy Application
碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, epitaxial aluminum film were grown on Si(100) and Si(111) by molecular beam epitaxy. Moreover, 3 nm aluminum film were used as buffer layer to grow antimonide on silicon substrate. Aluminum film grown on Si(100) at low temperature were poly crystal...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/j5upty |