Analysis and Design of 2D Negative Capacitance FETs

碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, we first investigate the remnant polarization (Pr) dependence of subthreshold and ON-state characteristics for the intrinsic and extrinsic 2D Negative-Capacitance FETs (2D NCFETs) with the aid of TCAD numerical simulation. For the intrinsic 2D NCFE...

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Bibliographic Details
Main Authors: Lu, Po-Sheng, 呂勃陞
Other Authors: Su, Pin
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/4t9xdb