Study of AlGaN/GaN HEMTs with Short Gate Length by Two Steps Photolithography for High Frequency Applications

碩士 === 國立交通大學 === 照明與能源光電研究所 === 107

Bibliographic Details
Main Authors: Chang, Po-Sheng, 張博盛
Other Authors: Chang, Edward Yi
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/x2f3fp