Investigation of Titanium Nitride/Titanium Dioxide Thin-Film Photodetector Fabricated by Atomic Layer Chemical Vapor Deposition
碩士 === 國立交通大學 === 照明與能源光電研究所 === 107 === Typically, to generate photo-excited carriers from a semiconductor, enough absorption for the incident photons is necessary. In principle, the optical absorption is determined by the band gap of the material. As long as the energy of the incoming photons is l...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xy6u92 |