Selective Deposition of ZnO on Silicon Nanodevices for Humidity Sensing Application
碩士 === 國立交通大學 === 應用化學系分子科學碩博士班 === 107 === In this work, a novel n+/n-/n+ polysilicon nanobelt (PNB) device has been presented for selective deposition of ZnO on n- region via atomic layer deposition (ALD) and device localized Joule self-heating. The device surface temperature was estimated via the...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s4f8zv |
| Summary: | 碩士 === 國立交通大學 === 應用化學系分子科學碩博士班 === 107 === In this work, a novel n+/n-/n+ polysilicon nanobelt (PNB) device has been presented for selective deposition of ZnO on n- region via atomic layer deposition (ALD) and device localized Joule self-heating. The device surface temperature was estimated via the relationship between COMSOL Multiphysics simulations and thermal chuck I-V(T) measurements. The estimated temperature was also used for ALD selective deposition. The device surface morphology and thickness after ALD selective deposition were characterized by AFM. In humidity detection, ZnO-decorated devices were mounted in a small PDMS chamber to perform humidity detection. The sensing behaviors with respect to self-heating temperature were analyzed at various relative humidity. An anomalous n to p-type response transition during humidity detection was observed when relative humidity was over 17% at a device bias larger than 25 V. Finally, a humidity sensing model based on chemical and physical adsorption of water molecule adsorption proposed. This model fully explained the electrical responses under various relative humidity.
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