Fabrication and Characterization of Ohmic Contacts formed by Multi-layer Metal Stack on InGaAs
碩士 === 國立交通大學 === 材料科學與工程學系所 === 107 === As the scale of device shrinking, the manufacturing technology of Si-based CMOS approaches its physical limit, which makes the devices encounter more non-ideal effects. Recently, searching alternative materials is the major research in semiconductor field. Am...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/8kvbwv |