NEGF Simulation of Nanoscale MOSFETs with Anisotropic Si Permittivity
碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 107 === CMOS scaling has led to several issues that are necessary to be investigated further. In this thesis, the transport behavior of electrons in a nanoscale double-gate (DG) MOSFET is modeled by solving Schrödinger equation in non-equilibrium Green’s function...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/brm6j2 |