The study of photoelectrochemical water splitting using n-GaN with sol-gel coated NiOX ＆ CoOX thin film as working electrode
碩士 === 國立成功大學 === 光電科學與工程學系 === 107 === In this experiment, we used nickel oxide (NiOX) and cobalt oxide (CoOX) to cover n-type gallium nitride (n-GaN) to reduce surface corrosion of gallium nitride (GaN) semiconductors and electrolytes during long-term measurements. Nickel (Ni) and cobalt (Co) powd...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3awbhp |