Impact of Ultraviolet Light Radiation on the Switching Characteristics of Resistive Random-Access Memory (ReRAM) Devices of Different Dimensions
碩士 === 國立成功大學 === 微電子工程研究所 === 107 === Resistive switching memory is a system in which the resistance of a material can be modulated between two nonvolatile states by applying an electrical pulse, which has the combined advantages of fast read/write speed, simplicity in structure, small device size...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/z7d3x8 |