A TCAD Simulation Study for Transistor with Ferroelectric Material
碩士 === 國立中興大學 === 電機工程學系所 === 107 === Nowadays, iron materials are applied to transistors in two aspects of, first, a transistor with a negative capacitance effect that improves the voltage amplification effect, and secondly, a ferroelectric memory applied to memory units. This thesis focuses on the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5441076%22.&searchmode=basic |