| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 107 === One of the trends in microelectronics fabrication is to manufacture highly conductive interconnections at a low processing temperature using fine metallic particles. Considering the low heat-tolerance of polymeric substrates, high cost of Au and Ag, as well as easy oxidation of Cu nanoparticles, photonic sintering of copper oxide particles (Cu2O and CuO) was developed to manufacture interconnections on PI substrates. Experimental results show that with the addition of light-dissociable agent PVP, copper oxide pastes can be reduced and sintered into conductive tracks simultaneously subject to only several flash pulses with a low energy density of 1.34 J/cm2. Optimal particle size ratio, as well as proper additions of formic acid and its copper salts, improved the continuity of sintered structure, assisted oxide reduction and thereby enhanced electrical conductance. The data indicates Cu2O was easier to be reduced compared with CuO. Electrical resistivity of the pastes decreased and then increased with a higher flash pulse number, which could be ascribed to the oxide re-formation by excess light exposure. The lowest electrical resistivity of the hybrid pastes developed in this study reached 50 µΩ‧cm.
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