The Process Development of Cr Thin Film as Diffusion Barrier Layer for Mg2Sn0.7Si0.285Sb0.015 Thermoelectric Alloys
碩士 === 國立中興大學 === 材料科學與工程學系所 === 107 === Based on the selected points such as thermal expansion coefficient, electrical conductivity, thermal conductivity, and phase diagram, this study evaluates that it may be used as a diffusion barrier material for Mg2Sn0.7Si0.285Sb0.015 thermoelectric material,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5159030%22.&searchmode=basic |