Recovery Phenomenon of Nanoscale n-type FinFETs
碩士 === 明新科技大學 === 電子工程系碩士班 === 107 === The gate oxide layer in the semiconductor device is a very important position, and it operates according to different gate voltages. Now some new process technologies can be used for the oxidized layer of silicon oxynitride (SiON). With the new process technolo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vx23g6 |