Gettering grinding apply on bump wafer which thinner than 150 μm and with memory function to avoid metal diffusion effectively
碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 107 === This study focuses on the new gettering grinding procedure which applies to memory wafer assembly which thickness less than 150 μm to prevent diffusion of metal ions. Function of memory wafer will fail due to metal ions diffused through die backside...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26chas |