| Summary: | 碩士 === 逢甲大學 === 電子工程學系 === 107 === These days the mainstream nonvolatile memory is flash memory, but with the process technology of device miniature, flash memory will be facing many problems, such as leakage of the dielectric layer and excessive operating voltage. Among ReRAM has attracted attention because it has low program voltage, fast program speed, and simple structure. Since the development of ReRAM, many materials have been developed as resistive layers. In recent years, organic materials have been widely used to replace inorganic materials, this is because organic materials have the advantages flexibility, diversity, and low cost. Therefore, it is very suitable as a dielectric layer for ReRAM and made on the flexible substrate.
In this thesis, organic ReRAM is fabricated on the flexible substrate. After a series of the electrical measurement, it can be inferred that the energy band parameters affecting organic, and analyzing the current conduction mechanism of the experimental device, and measuring the characteristics of the experimental device under different stresses. For the results of the electrical analysis, bending will make the device current increase and the resistance decrease. So we speculate when the device under bending strains, the molecular chains will influence by pressure, so the number of contacts will be changing between molecular chains, and affecting the energy barrier and electron mobility. Further, find out the organic ReRAM after bending, many characteristics can still be maintained within a certain range, means it does have the potential in the future.
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