Synthesis of Layered InS Material for Field-Effect Transistor Device Application

• Main Authors: Tu, Chien-Liang, 凃建良
• Other Authors: Hung, San-Shan
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/qhh8ra

碩士 === 逢甲大學 === 自動控制工程學系 === 107 === In this research, a single crystal triangular structure and a film of InS were synthesized by chemical vapor deposition. We produce a high temperature environment through a furnace and control the pressure in a low pressure environment by introducing the argon and the hydrogen gas. The systhesis environment causes the sulfur precursor and the indium powder to generate vapor pressure, which were combined by a chemical reaction. Finally, it falls on the substrate to form the InS with a triangular single crystal or film forms. After that, a transfer method was used to transfer the InS form original substrate to various substrates. The characteristics of InS have been confirmed by Raman, PL, AFM, XPS, TEM… The Raman spectra show the InS characteristic peaks, The AFM reveals the thickness of the bi-layer InS is about 1.6 nm. The XPS analysis shows its element In:S ratio is ~1, and the element ratio In:S was 1:1 by XPS. The grown sample was confirmed to be InS. Finally, the as-grown single crystal InS were prepared to the field effect transistor, and its electical properties were measured.