Synthesis of Layered InS Material for Field-Effect Transistor Device Application
碩士 === 逢甲大學 === 自動控制工程學系 === 107 === In this research, a single crystal triangular structure and a film of InS were synthesized by chemical vapor deposition. We produce a high temperature environment through a furnace and control the pressure in a low pressure environment by introducing the argon an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qhh8ra |