Epitaxy Optimization of Gallium Arsenide Grown on Silicon Substrate by Metal Organic Chemical Vapor Phase Deposition

碩士 === 中原大學 === 電子工程研究所 === 107 === In this paper, Gallium Arsenide(GaAs) film was grown on Silicon(Si) substrate by Metal-organic Chemical Vapor Deposition(MOCVD). GaAs and Si had 4% lattice mismatch, so there were many defects. Therefore, GaAs film was grown by Two-Step Growth and Thermal Cycle An...

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Bibliographic Details
Main Authors: Pin-Chieh Chen, 陳品捷
Other Authors: Wu-Yih Uen
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/78s8ar