Warpage Simulation Analysis for Fan-out Panel Level Packaging Process

• Main Authors: LO, WEI-CHEN, 羅韋晨
• Other Authors: LWO, BEN-JE
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/8g32d7

碩士 === 國防大學理工學院 === 機械工程碩士班 === 107 === Fan-out panel-level packaging (FOPLP) technology is known as next-generation fan-out technology because of its high throughput and thin package. However, warpage may occur in the FOPLP process, which causes subsequent yield and reliability problems. Therefore, this thesis adopts finite element software to simulate the warpage generated by FOPLP in each stage process and discusses the influence of FOPLP packaging materials and structural parameters. The aim of this thesis is to determine the appropriate FOPLP geometry design and material parameters for improving the process warpage. For this purpose, the study used ANSYS 17.2 element birth and death techniques to simulate all FOPLP processes for obtaining the warpage values of each process stage. The Taguchi method is applied by using L12 and L8 orthogonal array experiments with an optimal parameter combination to identify important factors. The results of single factor analysis indicate that the warpage can be reduced by decreasing the Young’s modulus of the carrier, Polyimide (PI) Young’s modulus and the PI coefficient of thermal expansion (CTE), and increasing the carrier CTE, Young’s modulus of the epoxy molding compound (EMC), CTE of EMC, die occupancy ratio, and EMC thickness. Furthermore placing small Si blocks around the die can reduce the warpage value by 17% during carrier debonding. According to the experimental optimization results, the optimum factor can reduce the warpage value by 90% for carrier debonding and 98% for molding. Determining the best factor can effectively reduce the warpage in the process. Moreover, Taguchi analysis indicates that the Young’s modulus of EMC and EMC thickness are the most influential parameters for warpage during the carrier debonding process. The carrier CTE and Young’s modulus of the carrier have the most obvious influence on warpage during the EMC molding process.