| Summary: | 碩士 === 元智大學 === 化學工程與材料科學學系 === 106 === In this study, the capacitive coupling radio frequency atmospheric pressure plasma jet for silicon etching, through the Argon carrier gas, varying the gas flow rate, plasma power, working distance for plasma etching. The depth two-dimensional and three-dimensional surface topographies were detected by surface profilometer. In addition, the XPS depth profile was used to confirm the carbon deposition at the bottom of etching. The comparison and discussion of etching using different etching gases of carbon tetrafluoride (CF4)、trifluoromethane (CHF3) and difluoromethane (CH2F2).Electron excited temperature and electron density under different operating conditions of atmospheric pressure plasma was calculated by optical emission spectrometer (OES). From the experimental results show that the carbon tetrafluoride (CF4) flow rate of 250 sccm and the working distance of 6 mm, the etching rate up to 54.1 m/min, while the same operating parameters of trifluoromethane (CHF3), etching rate is 38.7 m/min, difluoromethane (CH2F2) is also the same parameters, etching rate is 11.1 m/min, it’s etching rate is the smallest of the three.
Therefore, the study inferred that the fluorocarbon gas of etching, and fluorocarbon ratio is more than two and the chemical structure, and the gas itself contains hydrogen atoms, which is the main cause of atmospheric plasma etching of silicon wafer.
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