Using trifluoromethane plasma etching of single crystal silicon by atmospheric pressure plasma jet

碩士 === 元智大學 === 化學工程與材料科學學系 === 106 === In this study, the capacitive coupling radio frequency atmospheric pressure plasma jet for silicon etching, through the Argon carrier gas, varying the gas flow rate, plasma power, working distance for plasma etching. The depth two-dimensional and three-dimensi...

Full description

Bibliographic Details
Main Authors: Yu-Ching Sung, 宋俞靜
Other Authors: Chun-Huang
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/r7v4ae