A Study of Effect of Drain Parasitic Field Plate on Amorphous InGaZnO Thin-Film Transistor

碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In this work, 4-mask amorphous InGaZnO channel passivated TFT (a-IGZO CHP TFT) is simulated by technology computer aided design (TCAD), to investigate effects of source/drain (S/D) parasitic field-plates (FPs). Electrical characteristic and active layer carrier...

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Bibliographic Details
Main Authors: HUANG, PO-HAO, 黃柏皓
Other Authors: HSU, CHIH-CHIEH
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/e8gwhq