The study of etching on GaN epitaxial layer by acid solution
碩士 === 淡江大學 === 化學工程與材料工程學系碩士班 === 106 === This study aims at investigating the etching methods of acid solution to GaN epitaxial layer. It produced the surface roughening GaN structure by the GaN epitaxial layer on the sapphire which was etched by three different acid solutions, which were H2SO4, H...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7ga7c4 |