Properties of In-N codoped p-type ZnO transparent conducting thin films grown by pulsed laser deposition
碩士 === 國立臺北科技大學 === 光電工程系 === 106 === In this paper, In-N codoped ZnO thin film was grown on c-plane sapphire by pulsed laser deposition. We investigate the effect of changing the doping concentration, substrate temperature, growth pressure, and background gas flow ratio on the film properties. X-ra...
Main Authors: | Pao-Te Huang, 黃寶德 |
---|---|
Other Authors: | 洪魏寬 |
Format: | Others |
Language: | zh-TW |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/9yf853 |
Similar Items
-
Properties of Al-N codoped p-type ZnO and ZnMgO transparent conducting thin films prepared by pulsed laser deposition
by: Guan-Hong Huang, et al. -
Properties of Al-N codoped p-type ZnMgO transparent conducting thin films on ZnO buffer layer prepared by pulsed laser deposition
by: Tzu-Hsiang Hsu, et al.
Published: (2018) -
ZnO and ZnO-based Heterojunctions Grown by Fast Pulsed Laser Deposition
by: Ming-Cheng Lin, et al.
Published: (2008) -
Photoluminescence of ZnO Grown by Eclipse Pulsed Laser deposition
by: Mendelsberg, Rueben Joseph
Published: (2009) -
Pulsed Laser Deposition of Highly Conductive Transparent Ga-doped ZnO for Optoelectronic Device Applications
Published: (2011)