| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系 === 106 === In this paper, In-N codoped ZnO thin film was grown on c-plane sapphire by pulsed laser deposition. We investigate the effect of changing the doping concentration, substrate temperature, growth pressure, and background gas flow ratio on the film properties. X-ray diffractometer (XRD) was used to identify the crystal quality. Hall measurement was used to investigate its electrical properties. UV-VIS transmission spectrum was used to detect the visible light transmittance.
The results show that the p-type ZnO thin film with great crystal quality was prepared under the indium oxide doping concentration of 1 at.%, the substrate temperature of 600 ° C, the growth pressure of 0.1 torr, and the background gas flow ratio of O2:N2 = 1:2. The visible light transmittance is 80% or more, the resistivity is 6.48×10-3Ω·cm, the carrier mobility is 5.4 cm2/V·s and the carrier concentration is 1.78×1020 cm-3 .
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