A Study of ESD-Immunity Enhancement for UHV 300V nLDMOS Transistors

碩士 === 國立聯合大學 === 電子工程學系碩士班 === 106 === With the progress of the process shrinkage of the semiconductor integrated circuit, the volume of electronic product is smaller over time, but the uncertainty of reliability is also generated. Meanwhile, the electrostatic-discharge (ESD) issue should be noted...

Full description

Bibliographic Details
Main Authors: Chao, Yi-Hao, 趙奕豪
Other Authors: 陳勝利
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/2345j4