Study on Reliability of Tri-gate FinFET with Different Active Surface Area(SA) in Hot Carriers Effect and Constant Voltage Stress

碩士 === 國立高雄大學 === 電機工程學系碩博士班 === 106

Bibliographic Details
Main Authors: HSU, CHIH-CHENG, 許值誠
Other Authors: YEH, WEN-KUAN
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/u5yxm8