Influence of different electron blocking layer structures on photoelectric properties of GaN-based phototransistors
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 106 === This paper used a commercial gallium nitride blue LED wafer with an electron blocking layer (EBL) of a superlattice structure. The Si-diffusion method is used to invert the uppermost p-GaN into n-GaN, and the wafer structure is changed from the original p-i-n...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bx2exy |