Study of GaN-Based Power MOSFET with Underlayer Field-Plate
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 106 === As the demand for power devices increases, gallium nitride(GaN) has become a widely used material. Compared with the traditional silicon materials, gallium nitride has wide bandgap, high breakdown voltage, good thermal stability, peak electronic velocity, and...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8p8t8c |