Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive

碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 106 === In this paper, wide-bandgap (WBG) gallium nitride (GaN)-based power devices were used to replace the traditional silicon power device to increase the switching speed of the power device and reduce the switching loss and conduction loss of the three-phase i...

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Main Authors: Chi Chang, 張繼
Other Authors: Kung-Yen Lee
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/763w44
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spelling ndltd-TW-106NTU053450282019-05-16T01:00:00Z http://ndltd.ncl.edu.tw/handle/763w44 Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive 氮化鎵功率元件於永磁同步馬達驅動之研究 Chi Chang 張繼 碩士 國立臺灣大學 工程科學及海洋工程學研究所 106 In this paper, wide-bandgap (WBG) gallium nitride (GaN)-based power devices were used to replace the traditional silicon power device to increase the switching speed of the power device and reduce the switching loss and conduction loss of the three-phase inverter. Therefore, we can use gallium nitride (GaN)-based power devices to increase the power conversion efficiency of the permanent magnet synchronous motor control system and improve the heat dissipation of the three-phase inverter. LTspice circuit simulation software were used to analyze the three-phase inverter circuits with traditional silicon power devices and gallium nitride (GaN) power devices. Gallium nitride (GaN) power devices can reduce switch on-time and switch-off time by 90%, and it also reduce the switching loss of 89% in the inverter when the load current is 8(A). By using MATLAB / Simulink, space vector pulse width modulation (SVPWM), vector control, permanent magnet synchronous machine (PMSM) and control system were combined to simulate the system response such as motor speed, voltage and current waveform of permanent magnet synchronous motor control system. We also use micro-control board and gallium nitride (GaN) power module to implement the permanent magnet synchronous motor control system. Verify that wide-bandgap (WBG) gallium nitride (GaN)-based power devices can be applied to the permanent magnet synchronous motor control system. We also compare the different between the GaN and Si motor control system. The GaN motor control system reduce the total power loss of 1440mW and up to 85.27% efficiency when the motor load is 0.2Nm. The GaN inverter also achieve 95.116% efficiency. Finally, the permanent magnet synchronous motor control system with higher switching speed and better power conversion efficiency is built. Kung-Yen Lee 李坤彥 2018 學位論文 ; thesis 107 zh-TW
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language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 106 === In this paper, wide-bandgap (WBG) gallium nitride (GaN)-based power devices were used to replace the traditional silicon power device to increase the switching speed of the power device and reduce the switching loss and conduction loss of the three-phase inverter. Therefore, we can use gallium nitride (GaN)-based power devices to increase the power conversion efficiency of the permanent magnet synchronous motor control system and improve the heat dissipation of the three-phase inverter. LTspice circuit simulation software were used to analyze the three-phase inverter circuits with traditional silicon power devices and gallium nitride (GaN) power devices. Gallium nitride (GaN) power devices can reduce switch on-time and switch-off time by 90%, and it also reduce the switching loss of 89% in the inverter when the load current is 8(A). By using MATLAB / Simulink, space vector pulse width modulation (SVPWM), vector control, permanent magnet synchronous machine (PMSM) and control system were combined to simulate the system response such as motor speed, voltage and current waveform of permanent magnet synchronous motor control system. We also use micro-control board and gallium nitride (GaN) power module to implement the permanent magnet synchronous motor control system. Verify that wide-bandgap (WBG) gallium nitride (GaN)-based power devices can be applied to the permanent magnet synchronous motor control system. We also compare the different between the GaN and Si motor control system. The GaN motor control system reduce the total power loss of 1440mW and up to 85.27% efficiency when the motor load is 0.2Nm. The GaN inverter also achieve 95.116% efficiency. Finally, the permanent magnet synchronous motor control system with higher switching speed and better power conversion efficiency is built.
author2 Kung-Yen Lee
author_facet Kung-Yen Lee
Chi Chang
張繼
author Chi Chang
張繼
spellingShingle Chi Chang
張繼
Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
author_sort Chi Chang
title Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
title_short Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
title_full Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
title_fullStr Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
title_full_unstemmed Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
title_sort research on gan-based power devices applied in permanent magnet synchronous motor drive
publishDate 2018
url http://ndltd.ncl.edu.tw/handle/763w44
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