Research on GaN-based Power Devices Applied in Permanent Magnet Synchronous Motor Drive
碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 106 === In this paper, wide-bandgap (WBG) gallium nitride (GaN)-based power devices were used to replace the traditional silicon power device to increase the switching speed of the power device and reduce the switching loss and conduction loss of the three-phase i...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/763w44 |