Transport Properties of High-performance InSe Transistors on Self-assembled-monolayer-functionalized Substrates
碩士 === 國立臺灣大學 === 應用物理研究所 === 106 === Atomically thin two-dimensional (2D) layered semiconductors including transition metal dichalcogenides (TMDs), black phosphorous and indium selenide (InSe) hold great promises for electronics applications. The carrier transport in these transistors is influenced...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/8b856k |