Development of Proximity Effect Correction Method for E-Beam Lithography

• Main Authors: Jia-Hao Ye, 葉家豪
• Other Authors: Chieh-Hsiung Kuan
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/khrsbt

碩士 === 國立臺灣大學 === 生醫電子與資訊學研究所 === 106 === Lithography is the key technology in integrated circuits manufacturing process, and the improvement of it is the main reason that Moore''s law can keep going. The rapid development of semiconductor industry and chips can become smaller and cheaper are closely related to the progress of lithography.For a long time, optical lithography is the mainstream in semiconductor industry, it is superior to other lithography method because of its mass production with high speed and low cost. However, with chips size become smaller and smaller optical lithography has reached its limit, it is necessary to investigate a new method for lithography, E-beam (Electron Beam Lithography) and EUV (Extreme Ultraviolet Lithography) are the main research direction lithography method in the future. As the development of semiconductor process, many important solid state device could be smaller and more efficient. For example: attena device and current trend of the 3-D device FIN-FET. All the device mentioned above need extremely high accurate and high developing quality to make sure that the stability of the attena array and avoid leakage current in the FIN-FET. The stability and efficiency depends on how to fabricate the pattern with high quality and extremely small size. In this thesis, we focus on how to improve the proximity effect in the e-beam lithography. We used the computer to simulate the developing process of the resist for improving proximity effect. The method we used is different from the traditional method including finding-all-possible method and cell-removal method, this two method take too much time because of the repeated trial-and-error process. we have proposed two hypothesis, one is there exists a critical path in developing environment, another one is we transform the developing path problem into a graph theory problem.Then we apply the particle swarm intelligence optimism which mimics the natural collective behavior of animals to reduce the computational cost. In this paper, we employ the depth of U-shape pattern to be a index of optimism level, and we have fabricated the U-shape structure with high quality and accuracy. It is helpful for improving the power and quality of signals U-shape split-ring resonator est.