Design and Implementation of Leakage Compensation Circuit for 5T SRAM
博士 === 國立中山大學 === 電機工程學系研究所 === 106 === To reduce the SRAM area, a 5T single-ended SRAM cell has been proposed by our laboratory before. This dissertation presents two compensation designs for the 5T single-ended SRAM to reduce the power consumption of consumer electronics, e.g., smartphones. The f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48vp43 |