Growth and sulfurization of ZnO/MoOx bilayers: effects of SiO2 overlayer on Si substrate
碩士 === 國立中山大學 === 物理學系研究所 === 106 === Prior to grow the zinc oxide (ZnO) film, the amorphous silicon dioxide (SiO2) was prepared on silicon wafer (100) and (111) under 900degree C by using furnace. ZnO single layer was subsequently deposited onto the SiO2 buffer layer by RF magnetron sputtering then...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/g29d48 |