Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device
博士 === 國立中山大學 === 物理學系研究所 === 106 === With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously produced. The demand for memory, therefore, is dramatically increasing. Traditional flash memo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/t35q72 |