Influence of Defect Density and Buffer Layer Thickness on the Reliability of GaN-based Light Emitting Diodes

碩士 === 國立彰化師範大學 === 光電科技研究所 === 106 === In this thesis, the influence of defect density and buffer layer thickness on the reliability of InGaN light emitting diodes (LEDs) was investigated. First of all, basic electro-optical characteristics of LEDs and operation principle of measurement instruments...

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Bibliographic Details
Main Authors: LIE,PO-HAI, 賴柏豪
Other Authors: Huang, Man-Fang
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/kw8x25