Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching

碩士 === 國立中央大學 === 機械工程學系 === 106 === Nanoporous material has been widely used in various applications. It has high area-to-volume ratio that increases surface area and can be used in gas sensors, mass spectrometers, mass-transferring films, and anti-reflection coating on solar panels. Due to the in...

Full description

Bibliographic Details
Main Authors: PAN,XIANG-QIN, 潘詳親
Other Authors: 洪銘聰
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/z9zg43
id ndltd-TW-106NCU05489010
record_format oai_dc
spelling ndltd-TW-106NCU054890102019-05-16T00:15:46Z http://ndltd.ncl.edu.tw/handle/z9zg43 Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching 金屬輔助化學蝕刻製備多孔矽結構與其熱傳性質分析 PAN,XIANG-QIN 潘詳親 碩士 國立中央大學 機械工程學系 106 Nanoporous material has been widely used in various applications. It has high area-to-volume ratio that increases surface area and can be used in gas sensors, mass spectrometers, mass-transferring films, and anti-reflection coating on solar panels. Due to the increasing porosity and the size effects of nano-structures, it leads to an effective decreasing in the heat conduction coefficient and makes it a good thermal insulating material. Typical porous silicon fabrication processes include electrochemical etching, dry etching, and metal-assisted chemical etching. Among them, metal-assisted chemical etching has the advantages of simple process and low equipment cost. In this study, we use metal-assisted chemical etching to prepare high aspect ratio nanoporous silicon, explore the relation between etching parameters and porosities, and analyze its heat conduction properties. The silver nitrate solution and hydrofluoric acid were used to form the Ag nanoparticles on silicon surface as the catalyst for etching. The anisotropic etching was performed in the etching solution with hydrogen peroxide to form nanoporous structures. A well-distributed nanoporous structure was achieved through controlling the concentration of hydrogen peroxide. The results showed that for a long etching time, the etching rate became slower and the porous layer growth rate gradually decreased due to the etching on top structure. Different heat transfer models were used to analyze the thermal transfer coefficient. The results showed for the simplified models that do not consider the pore size exhibited a significant difference in thermal conductivity for small pore size samples. Considering of dependence of porosity and pore size in the process perspective, the effective thermal conductivity was lower than expected due to the impact of the small pore size structure. 洪銘聰 2017 學位論文 ; thesis 125 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 機械工程學系 === 106 === Nanoporous material has been widely used in various applications. It has high area-to-volume ratio that increases surface area and can be used in gas sensors, mass spectrometers, mass-transferring films, and anti-reflection coating on solar panels. Due to the increasing porosity and the size effects of nano-structures, it leads to an effective decreasing in the heat conduction coefficient and makes it a good thermal insulating material. Typical porous silicon fabrication processes include electrochemical etching, dry etching, and metal-assisted chemical etching. Among them, metal-assisted chemical etching has the advantages of simple process and low equipment cost. In this study, we use metal-assisted chemical etching to prepare high aspect ratio nanoporous silicon, explore the relation between etching parameters and porosities, and analyze its heat conduction properties. The silver nitrate solution and hydrofluoric acid were used to form the Ag nanoparticles on silicon surface as the catalyst for etching. The anisotropic etching was performed in the etching solution with hydrogen peroxide to form nanoporous structures. A well-distributed nanoporous structure was achieved through controlling the concentration of hydrogen peroxide. The results showed that for a long etching time, the etching rate became slower and the porous layer growth rate gradually decreased due to the etching on top structure. Different heat transfer models were used to analyze the thermal transfer coefficient. The results showed for the simplified models that do not consider the pore size exhibited a significant difference in thermal conductivity for small pore size samples. Considering of dependence of porosity and pore size in the process perspective, the effective thermal conductivity was lower than expected due to the impact of the small pore size structure.
author2 洪銘聰
author_facet 洪銘聰
PAN,XIANG-QIN
潘詳親
author PAN,XIANG-QIN
潘詳親
spellingShingle PAN,XIANG-QIN
潘詳親
Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
author_sort PAN,XIANG-QIN
title Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
title_short Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
title_full Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
title_fullStr Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
title_full_unstemmed Manufacturing and Thermal Property Analysis of Porous Silicon Structure by Metal Assisted Chemical Etching
title_sort manufacturing and thermal property analysis of porous silicon structure by metal assisted chemical etching
publishDate 2017
url http://ndltd.ncl.edu.tw/handle/z9zg43
work_keys_str_mv AT panxiangqin manufacturingandthermalpropertyanalysisofporoussiliconstructurebymetalassistedchemicaletching
AT pānxiángqīn manufacturingandthermalpropertyanalysisofporoussiliconstructurebymetalassistedchemicaletching
AT panxiangqin jīnshǔfǔzhùhuàxuéshíkèzhìbèiduōkǒngxìjiégòuyǔqírèchuánxìngzhìfēnxī
AT pānxiángqīn jīnshǔfǔzhùhuàxuéshíkèzhìbèiduōkǒngxìjiégòuyǔqírèchuánxìngzhìfēnxī
_version_ 1719164401569759232