Implementations on X/Ka-band CMOS Wideband Unilateralized Power Amplifiers and X-band GaN Power Amplifiers with Low Impedance Binary Power Combining Technique and Doherty Architecture
碩士 === 國立中央大學 === 電機工程學系 === 106 === The thesis developed five power amplifiers that were designed in tsmcTM 0.18-µm CMOS, tsmcTM 90-nm CMOS and WINTM 0.25-µm GaN for both X-band and Ka-band operations. The best transistor size and biasing current density of the used transistors were chosen by simul...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e24f34 |