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碩士 === 國立中央大學 === 電機工程學系 === 106 === GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on Silicon (111) substrate with various recess depths are investigated in this study. Conduction losses in onset voltage and reverse-bias leakage result in significant limitations to power swi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uvz96d |