Development of InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors with Ti/AlSiCu Ohmic Contact
碩士 === 國立中央大學 === 電機工程學系 === 106 === For the past five decades, the development of Si-based CMOS manufacturing technology has been following Moore's Law in shrinking the physical dimension and enhancing the device performance of integrated circuits. As the manufacturing technology approaches it...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5ddwgy |