Fabrication and Characterization of AlInN/GaN High Electron Mobility Transistors
碩士 === 國立中央大學 === 電機工程學系 === 106 === This thesis aims at fabrication and characterization of high frequency characterisitcs of AlInN/AlN/GaN high electron mobility transistors (HEMTs). In this work, 0.4 μm Schottky-gate HEMTs have been fabricated on epiwafers grown by metal-organic chemical vapor de...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23qqdd |