Design of novel backside gate NWFET ion sensors using TSMC 2P4M process
碩士 === 國立交通大學 === 機械工程系所 === 106 === Most conventional Ion-sensitive field effect transistor (ISFET) possessed a floating gate and took costly in-house process to fabricate. In this paper, we propose a method using TSMC D35 2P4M process to produce several backside gate nanowire field effect transist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mv4h7k |