| Summary: | 博士 === 國立交通大學 === 機械工程系所 === 106 === This study examined the output electrical characteristics—output characteristics (IDS–VDS), transfer characteristics (IDS–VGS), and parasitic capacitance (C–VDS)—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhancement- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally. LTspice simulation software was adopted to compare the experimental switching results. Overall, the simulation results were strongly in agreement with the experimental results.
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