Uniformity Sorting Methodology for Cascode GaN FET Based on Parameter Extraction of Electrical Characteristics
博士 === 國立交通大學 === 機械工程系所 === 106 === This study examined the output electrical characteristics—output characteristics (IDS–VDS), transfer characteristics (IDS–VGS), and parasitic capacitance (C–VDS)—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanc...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2017
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Online Access: | http://ndltd.ncl.edu.tw/handle/6kvacz |