Structure and Orientation Study of Silicon Nanowires
碩士 === 國立交通大學 === 電子物理系所 === 106 === In our study, we use Ni as a catalyzing material to grow Si nanowires on Si substrate in ultra-high vacuum chemical vapor deposition (UHV-CVD) system. Comparing with electron beam evaporation (EBE) system, we investigate the morphology and growth directions of Si...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/u28z99 |